Comparison of MOS and Schottky W/Pt-GaN diodes for hydrogen detection
Comparison of MOS and Schottky W/Pt-GaN diodes for hydrogen detection
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DOI：
10.1016/j.snb.2004.05.018
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发表时间：
2005-01-24
影响因子：
8.4
通讯作者：
Pearton, SJ
中科院分区：
文献类型：
--
作者：
Kang, BS;Kim, S;Pearton, SJ
在350-600 ℃的温度范围内，当测量环境从纯N-2改变为10%H-2/90%N时，W/Pt接触GaN肖特基二极管在低偏压（3 V）下显示出>1 mA的正向电流变化。在本文中，我们表明，使用的金属氧化物半导体（MOS）二极管结构与S2 O3栅极电介质和相同的W/Pt金属化显示这些相同的可逆变化，在正向电流暴露于H-2的环境中，在更宽的温度范围（90至> 625 degreesC）。在这两种情况下的电流的增加是在30-50 mV 10%H-2/90%N的MOS和肖特基栅极的有效势垒高度的减少的结果？相对于纯N-2的环境，是由于Pt接触上的H-2的催化解离，随后扩散到W/GaN或Sc2 O3/GaN界面。氧化物的存在降低了可以检测到的氢的温度，并且结合使用高温稳定的W金属化增强了这些宽带隙传感器的潜在应用。(C)2004 Elsevier B. V.保留所有权利。
W/Pt contacted GaN Schottky diodes show forward current changes of >1 mA at low bias(3 V) in the temperature range 350-600 degreesC when the measurement ambient is changed from pure N-2 to 10%H-2/90%N,). In this paper we show that use of a metal-oxide-semiconductor (MOS) diode structure with S2O3 gate dielectric and the same W/Pt metallization show these same reversible changes in forward current upon exposure to H-2-containing ambients over a much broader temperature range (90 to > 625 degreesC). The increase in current in both cases is the result of a decrease in effective barrier height of the MOS and Schottky gates of 30-50 mV 10%H-2/90%N? ambients relative to pure N-2 and is due to catalytic dissociation of the H-2 on the Pt contact, followed by diffusion to the W/GaN or Sc2O3/GaN interface. The presence of the oxide lowers the temperature at the hydrogen which can be detected and in conjunction with the use of the high temperature stable W metallization enhances the potential applications of these wide bandgap sensors. (C) 2004 Elsevier B.V. All rights reserved.