Composite TiN–Ni thin films deposited by reactive magnetron sputter ion-plating
Composite TiN–Ni thin films deposited by reactive magnetron sputter ion-plating
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DOI：
10.1016/s0257-8972(98)00688-4
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发表时间：
1998-12
影响因子：
5.4
通讯作者：
M. Mišina;J. Musil;S. Kadlec
中科院分区：
文献类型：
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作者：
M. Mišina;J. Musil;S. Kadlec
采用直流磁控溅射离子镀技术，将Ti-48at % Ni合金靶材在氩气和氮气混合压力为0.1Pa的条件下，加热至250℃以上，在玻璃和不锈钢衬底上沉积TiN-Ni复合薄膜。在氮气流QN2≥6.4sccm处沉积的膜由δ-TiN和fcc镍相混合组成。研究了衬底负偏压和衬底温度对薄膜晶体结构的影响。与浮电位下沉积在衬底上的薄膜相比，−200V的衬底偏压改善了薄膜的结晶，并且减小了TiN和镍晶粒之间的尺寸差异。在270 ~ 430℃范围内改变衬底温度可以改变两相的晶粒尺寸。薄膜测得的最大硬度为10.5GPa。期望通过降低镍的含量来提高硬度。
Composite TiN–Ni thin films were deposited by direct-current (DC) magnetron sputter ion-plating from an alloy Ti–48at% Ni target in a mixture of argon and nitrogen gases at a total pressure of 0.1Pa onto glass and stainless steel substrates heated to temperatures higher than 250°C. The films deposited at the nitrogen flow QN2≥6.4sccm consisted of a mixture of δ-TiN and fcc nickel phases. The effects of negative substrate bias and substrate temperature on the crystal structure of the films were studied. The substrate bias of −200V resulted in improved crystallization of films and a smaller difference in size between the TiN and nickel grains, as compared with films deposited onto substrates at floating potential. It was possible to vary the crystal grain size of both phases by varying the substrate temperature in the range 270–430°C. The maximum hardness measured in the films was 10.5GPa. It is expected that the hardness can be increased by decreasing the content of nickel.