A stretchable form of single-crystal silicon for high-performance electronics on rubber substrates
A stretchable form of single-crystal silicon for high-performance electronics on rubber substrates
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DOI：
10.1126/science.1121401
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发表时间：
2006-01-13
期刊：
影响因子：
56.9
通讯作者：
Rogers, JA
中科院分区：
文献类型：
--
作者：
Khang, DY;Jiang, HQ;Rogers, JA
我们生产了一种可拉伸的硅形式，它由亚微米单晶元件组成，结构为微米级、周期性、波浪状几何形状。当由弹性体基底支撑时，这种“波状”硅可以可逆地拉伸和压缩到大的应变水平而不损坏硅。波的振幅和周期改变以适应这些变形，从而避免硅本身的大量应变。电介质、掺杂剂图案、电极和其他直接与硅集成的元件产生完全形成的高性能“波浪形”金属氧化物半导体场效应晶体管、p-n二极管和其他用于电子电路的器件，这些器件可以被拉伸或压缩到类似的大应变水平。
We have produced a stretchable form of silicon that consists of submicrometer single-crystal elements structured into shapes with microscale, periodic, wavelike geometries. When supported by an elastomeric substrate, this "wavy" silicon can be reversibly stretched and compressed to large levels of strain without damaging the silicon. The amplitudes and periods of the waves change to accommodate these deformations, thereby avoiding substantial strains in the silicon itself. Dielectrics, patterns of dopants, electrodes, and other elements directly integrated with the silicon yield fully formed, high-performance "wavy" metal oxide semiconductor field-effect transistors, p-n diodes, and other devices for electronic circuits that can be stretched or compressed to similarly large levels of strain.