All-Polymer Photovoltaic Devices of Poly(3-(4-n-octyl)-phenylthiophene) from Grignard Metathesis (GRIM) Polymerization
All-Polymer Photovoltaic Devices of Poly(3-(4-n-octyl)-phenylthiophene) from Grignard Metathesis (GRIM) Polymerization
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DOI：
10.1021/ja9059359
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发表时间：
2009-10-14
影响因子：
15
通讯作者：
Frechet, Jean M. J.
中科院分区：
文献类型：
--
作者：
Holcombe, Thomas W.;Woo, Claire H.;Frechet, Jean M. J.
报道了由格氏复分解反应（GRIM）合成聚[3-（4-正辛基）苯基噻吩]（POPT）的方法。GRIM POPT被发现具有良好的电子，光学和加工性能的有机光致发光材料（OPV）。POPT的空间电荷限制电流和场效应晶体管测量分别得到空穴迁移率为1 × 10 ~（-4）cm ~（2）/（Vs）和0.05 cm ~（2）/（Vs）。从氯苯中旋转浇铸GRIM POPT产生具有1.8 eV带隙的薄膜，并且PC61 BM：POPT本体异质注入器件提供3.1%的峰值性能。此外，在使用聚[2-甲氧基-5-（2 '-乙基己氧基）-1，4-（1-氰基亚乙烯基）亚苯基）（CNPPV）作为受体的全聚合物双层OPV中实现了2.0%的效率。与类似的聚（3-己基噻吩）（P3 HT）/CNPPV器件相比，分析了这种最先进的全聚合物器件。与基于更有利的能级对准、更大的有源层紧密吸收和类似的空穴迁移率的预期相反，P3 HT/CNPPV器件的性能不如POPT/CNPPV器件，峰值效率为0.93%。
The synthesis of poly[3-(4-n-octyl)-phenylthiophene] (POPT) from Grignard Metathesis (GRIM) is reported. GRIM POPT is found to have favorable electronic, optical, and processing properties for organic photovoltaics (OPVs). Space-charge limited current and field effect transistor measurements for POPT yielded hole mobilities of 1 X 10(-4) cm(2)/(V s) and 0.05 cm(2)/(V s), respectively. Spincasting GRIM POPT from chlorobenzene yields a thin film with a 1.8 eV band gap, and PC61BM:POPT bulk heterojection devices provide a peak performance of 3.1%. Additionally, an efficiency of 2.0% is achieved in an all-polymer, bilayer OPV using poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-(1-cyanovinylene)phenylene) (CNPPV) as an acceptor. This state-of-the-art all-polymer device is analyzed in comparison to the analogous poly(3-hexylthiophene) (P3HT)/CNPPV device. Counter to expectations based on more favorable energy level alignment, greater active layer tight absorption, and similar hole mobility, P3HT/CNPPV devices perform less well than POPT/CNPPV devices with a peak efficiency of 0.93%.