The Chemical Shift of the 29Si Nuclear Magnetic Resonance in a Synthetic Single Crystal of Mg2SiO4
The Chemical Shift of the 29Si Nuclear Magnetic Resonance in a Synthetic Single Crystal of Mg2SiO4
复制标题
Mg2SiO4 合成单晶中 29Si 核磁共振的化学位移
DOI：
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发表时间：
1985
期刊：
影响因子：
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通讯作者：
H. Rager
中科院分区：
文献类型：
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作者：
N. Weiden;H. Rager
在Mg_2SiO_4（空间群Pbnm，Z = 4）单晶中测量了~（29）Si核磁共振化学位移的角度依赖性。使用FT-NMR技术在室温下以39.758 MHz的频率进行测量。TMS中29 Si的位移张量的本征值为δx =-38.8ppm，δv =-55.3ppm，δz =-95.4ppm，本征矢量y平行于c，本征矢量z与a成7.5°角。结果清楚地显示了单个Si-O键对化学位移张量的影响。沿Si-O键的化学位移沿着与Si-O键距呈指数关系.
The angular dependence of the chemical shift of the 29Si nuclear magnetic resonance has been measured in a synthetic single crystal of Mg2SiO4 (space group Pbnm, Z = 4). The measurements were performed at room temperature at a frequency of 39.758 MHz using the FT-NMR technique. The eigenvalues of the shift tensor with respect to 29Si in TMS are δx = - 38.8 ppm, δv = -55.3 ppm and δz = - 95.4 ppm, with the eigenvector y parallel to c and the eigenvector z forming an angle of 7.5° with a. The results show clearly the influence of the individual S i - O bonds on the chemical shift tensor. The chemical shift along the S i -O bond depends in good approximation exponentially on the S i - O bond distance.