Experimental demonstration of nonreciprocal amplified spontaneous emission in a CoFe clad semiconductor optical amplifier for use as an integrated optical isolator
Experimental demonstration of nonreciprocal amplified spontaneous emission in a CoFe clad semiconductor optical amplifier for use as an integrated optical isolator
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用作集成光隔离器的 CoFe 包层半导体光放大器中不可逆放大自发发射的实验演示
DOI：
10.1063/1.1811802
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发表时间：
2004
影响因子：
4
通讯作者：
L. Lagae
中科院分区：
文献类型：
--
作者：
M. Vanwolleghem;W. Parys;D. Thourhout;R. Baets;F. Lelarge;O. Gauthier;B. Thedrez;R. Wirix;L. Lagae
给出了集成光波导光隔离器的实验结果。这一概念是基于利用横向磁化的铁磁金属作为电接触，在半导体InP基光放大器(SOA)中诱导横向磁光克尔效应。结果表明，该器件对TM偏振光表现出非互易损耗/增益，并且易于与其他基于InP的有源光子器件单片集成。我们设计、制作并表征了工作波长为1300 nm的铁磁金属包层光放大样机。在这些第一代器件中，我们获得了高达2.0分贝/毫米的隔离强度。
Experimental results are presented for an integrated-optical-waveguide-isolator concept. This concept is based on inducing the transverse magneto-optic Kerr effect in a semiconductor InP-based optical amplifier (SOA) by using a transversely magnetized ferromagnetic metal as an electrical contact. As a result, the SOA exhibits nonreciprocal loss/gain for TM polarized light and is easily monolithically integrated with other InP-based active photonic devices. We have designed, fabricated and characterized prototype ferromagnetic metal-clad optical amplifiers for an operation wavelength of 1300nm. In these first generation devices we obtained isolation strengths of up to 2.0dB∕mm.