Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth
Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth
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DOI：
10.1063/1.3374331
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发表时间：
2010-04-05
影响因子：
4
通讯作者：
Mishra, Umesh K.
中科院分区：
文献类型：
--
作者：
Dasgupta, Sansaptak;Nidhi;Mishra, Umesh K.
在高电子迁移率晶体管(HEMT)中，为了减小寄生元件的影响并获得较高的f(T)和f(Max)，必须采用超低欧姆接触电阻和自对准器件结构。N极(0001)GaN HEMT在接触电阻方面比Ga极HEMT具有天然优势，因为接触不是通过高禁带材料[Al(Ga)N]进行的。在这项工作中，我们利用极化诱导的三维电子气，通过等离子体(分子束外延)在接触区重新生长梯度InGaN和薄InN帽，从而获得了27微米的超低GaN二维接触电阻。
Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f(t) and f(max) in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 mu m to a GaN 2DEG.