Temperature-dependent contact resistances in high-quality polymer field-effect transistors
Temperature-dependent contact resistances in high-quality polymer field-effect transistors
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DOI：
10.1063/1.1639945
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发表时间：
2004-01-19
影响因子：
4
通讯作者：
Natelson, D
中科院分区：
文献类型：
--
作者：
Hamadani, BH;Natelson, D
有机半导体和金属之间的接触电阻可以控制包含这种材料的电子设备的传输特性。我们报告了底部接触聚（3-己基噻吩）场效应晶体管的寄生接触电阻和真通道电阻的测量，通道长度从400 nm到40 ma，从室温到77 K。当栅极电压固定时，接触电阻与通道电阻的比值随温度的降低而减小。我们将此结果与最近的有机半导体-金属接触模型进行比较。在室温和高栅极电压下，校正该接触电阻的迁移率可接近1 cm(2)/V s。(C) 2004年美国物理研究所。
Contact resistances between organic semiconductors and metals can dominate the transport properties of electronic devices incorporating such materials. We report measurements of the parasitic contact resistance and the true channel resistance in bottom contact poly(3-hexylthiophene) field-effect transistors with channel lengths from 400 nm up to 40 mum, from room temperature down to 77 K. For fixed gate voltage, the ratio of contact to channel resistance decreases with decreasing temperature. We compare this result with a recent model for organic semiconductor-metal contacts. Mobilities corrected for this contact resistance can approach 1 cm(2)/V s at room temperature and high gate voltages. (C) 2004 American Institute of Physics.