Thin layers and multilayers of porous silicon: X-ray diffraction investigation
Thin layers and multilayers of porous silicon: X-ray diffraction investigation
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多孔硅的薄层和多层：X 射线衍射研究
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
T. Baumbach
中科院分区：
文献类型：
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作者：
D. Buttard;D. Bellet;G. Dolino;T. Baumbach
多孔硅是多孔性材料的一个独特例子，它展示了近乎完美的单晶的性质。用高分辨X射线衍射法研究了厚度在100-1000 nm范围内的p-−和p+型多孔硅层。由于观察到了几个厚度条纹，实验结果和模拟结果的比较使人们能够推断出关于主要结构参数的信息，如孔隙率、晶格参数、厚度和异质相变宽度。多孔硅多层膜也被研究过：一些卫星被清楚地观察到。并将所得结果与文献进行了比较和讨论。
Porous silicon is a unique example of a porous material exhibiting the properties of a nearly perfect single crystal. High resolution x-ray diffraction has been used to investigate thin p− and p+ type porous silicon layers in the 100–1000-nm-thickness range. Since several thickness fringes are observed, the comparison between experimental results and simulations enables one to deduce information about the main structural parameters such as porosity, lattice parameter, thickness, and heterotransition width. Porous silicon multilayers have also been investigated: some satellites are clearly observed. The obtained results are then compared and discussed with the literature.