Topmetal-M: A novel pixel sensor for compact tracking applications
Topmetal-M: A novel pixel sensor for compact tracking applications
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Topmetal-M：用于紧凑型跟踪应用的新型像素传感器
DOI：
10.1016/j.nima.2020.164557
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Xiangming S
中科院分区：
文献类型：
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作者：
Weiping Ren;Wei Zhou;Bihui You;Ni Fang;Yan Wang;Haibo Yang;Honglin Zhang;Yao Wang;Jun Liu;Xianqin Li;Ping Yang;Le Xiao;Yuezhao Zhang;Xiangru Qu;Shuguang Zou;Guangming Huang;Hua Pei;Fan Shen;Dong Wang;Xiaoyang Niu;Yuan Mei;Yubo Han;Chaosong Gao;Xiangming S
Topmetal-M是一款大面积像素传感器（18 mm× 23 mm）原型，于2019年采用新的130 nm高电阻率CMOS工艺制造。它包含400行× 512列的正方形像素，像素间距为40 μ m。在Topmetal-M中，首次提出了一种将单片有源像素传感器（MAPS）和Topmetal传感器相结合的新型电荷收集方法。可以收集由传感器中的颗粒和沿着传感器上方的轨道沉积的电离电荷。像素内电路主要由一个低噪声电荷敏感放大器和一个带时间-幅度转换器（TAC）的ADC组成，前者用于建立能量重建信号，后者用于测量到达时间（TOA）。利用该机构，可以测量粒子的轨迹、粒子撞击位置、能量和到达时间。来自每个像素的模拟信号可通过整个像素阵列上的分时复用来访问。本文将讨论Topmetal-M传感器的设计和初步测试结果。
The Topmetal-M is a large area pixel sensor (18 mm× 23 mm) prototype fabricated in a new 130 nm high-resistivity CMOS process in 2019. It contains 400 rows× 512 columns square pixels with the pitch of 40 μ m. In Topmetal-M, a novel charge collection method combining the Monolithic Active Pixel Sensor (MAPS) and the Topmetal sensor has been proposed for the first time. Both the ionized charge deposited by the particle in the sensor and along the track over the sensor can be collected. The in-pixel circuit mainly consists of a low-noise charge sensitive amplifier to establish the signal for the energy reconstruction, and a discriminator with a Time-to-Amplitude Converter (TAC) for the Time of Arrival (TOA) measurement. With this mechanism, the trajectory, particle hit position, energy, and arrival time of the particle can be measured. The analog signal from each pixel is accessible through time-shared multiplexing over the entire pixel array. This paper will discuss the design and preliminary test results of the Topmetal-M sensor.