Negative magnetoresistance in p-type beta-FeSi2 single crystals in two regimes of variable-range hopping
Negative magnetoresistance in p-type beta-FeSi2 single crystals in two regimes of variable-range hopping
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DOI：
10.1103/physrevb.56.1005
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发表时间：
1997-07-15
影响因子：
3.7
通讯作者：
Bucher, E
中科院分区：
文献类型：
--
作者：
Arushanov, K;Lisunov, KG;Bucher, E
p型β-FeSi 2单晶在40 K以下表现出负磁阻，其随着温度的降低而增加，并且在至少12 kOe以下不会达到最大值或饱和。这种效应在Mott和Shklovskiii-Efros变程跳变机制中都可以观察到。在低于约3-5 kOe（取决于温度）的磁场下，磁阻显示出对磁场的二次依赖性，而在较高的磁场下，依赖性是线性的。用两种不同的方法分析了磁场中跳跃电导率的干扰效应。
Single crystals of p-type beta-FeSi2 demonstrate the negative magnetoresistance below 40 K that increases with decreasing temperature and does not reach either a maximum or a saturation up to at least 12 kOe. This effect is observed in both the Mott and the Shklovskii-Efros variable-range hopping regimes. At fields below approximately 3-5 kOe (depending on the temperature) the magnetoresistance displays a quadratic dependence on the magnetic field, while at higher fields the dependence is linear. The experimental data are analyzed using two different approaches to the interference effects in hopping conductivity in a magnetic field.