ATOMIC LAYER GROWTH OF SIO2 ON SI(100) USING SICL4 AND H2O IN A BINARY REACTION SEQUENCE
ATOMIC LAYER GROWTH OF SIO2 ON SI(100) USING SICL4 AND H2O IN A BINARY REACTION SEQUENCE
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DOI：
10.1016/0039-6028(95)00471-8
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发表时间：
1995-07-10
期刊：
影响因子：
1.9
通讯作者：
GEORGE, SM
中科院分区：
文献类型：
--
作者：
SNEH, O;WISE, ML;GEORGE, SM
利用二元反应序列化学可以实现对SiO_2生长的原子层控制。为了实现这种原子层的生长，二元反应SiCl4+2H(2)O--&Gt；SiO+4HCl可分为单独的半反应：(A)Si-OH*+SiCl4--&Gt；SiO-Si-Cl-3*+HCl，(B)Si-Cl*+H2O--&Gt；Si-OH*+HCl，其中星号表示表面物种。在适当的条件下，每个半反应都是完全的、自限的、可重复的ABAB。循环应产生层层受控的二氧化硅沉积。反应温度600-680K，反应压力1-50Torr，在Si(100)衬底上实现了SiO_2薄膜的原子层生长。这些实验是在一个位于超高真空(UHV)装置中的小高压室中进行的。该设计将薄膜生长的高压条件与超高真空环境相结合，使用激光诱导热脱附(LITD)、程序升温脱附(TPD)和俄歇电子能谱(AES)进行表面分析。利用这些技术在Si(100)衬底上控制生长了化学计量比的无氯SiO_2薄膜。在600-680K的温度下，获得了每AB循环约0.73毫升氧气(1.1埃的二氧化硅)的二氧化硅生长速率。另外，在第二真空室中进行的振动光谱研究利用高比表面积、氧化多孔硅的透射式傅里叶变换红外(FTIR)实验来监测二元反应序列化学过程中的表面物种。这些FTIR测量观察到了625 cm(-1)处的Si-Cl伸缩振动和3740 cm(-1)处的SiO-H振动，证实了每个半反应都是完全的自限反应。这些研究说明了原子层控制生长二氧化硅的可行性，并确定了二氧化硅二元反应序列化学所需的反应物压力和衬底温度。
The atomic layer control of SiO2 growth can be accomplished using binary reaction sequence chemistry. To achieve this atomic layer growth, the binary reaction SiCl4 + 2H(2)O --> SiO2 + 4 HCl can be divided into separate half-reactions:(A) Si-OH* + SiCl4 --> SiO-Si-Cl-3* + HCl,(B) Si-Cl* + H2O --> Si-OH* + HCl,where the asterisks designate the surface species. Under the appropriate conditions, each half-reaction is complete and self-limiting and repetitive ABAB... cycles should produce layer-by-layer-controlled SiO2 deposition. The atomic layer growth of SiO2 thin films on Si(100) was achieved tit temperatures from 600-680 K with reactant pressures from 1-50 Torr. These experiments were performed in a small high pressure chamber situated in an ultrahigh vacuum (UHV) apparatus. This design couples high pressure conditions for film growth with an UHV environment for surface analysis using laser-induced thermal desorption (LITD), temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). The controlled growth of a stoichiometric and chlorine-free SiO2 film on Si(100) was demonstrated using these techniques. SiO2 growth rates of approximately 0.73 ML of oxygen (1.1 Angstrom of SiO2) per AB cycle were obtained at 600-680 K. Additional vibrational spectroscopic studies performed in a second vacuum chamber utilized transmission Fourier transform infrared (FTIR) experiments on high surface area, oxidized porous silicon to monitor the surface species during the binary reaction sequence chemistry. These FTIR measurements observed the Si-Cl stretching vibration at 625 cm(-1) and the SiO-H vibration at 3740 cm(-1) and confirmed that each half-reaction was complete and self-limiting. These studies illustrate the feasibility of atomic-layer-controlled SiO2 growth and have determined the reactant pressures and substrate temperatures required for the SiO2 binary reaction sequence chemistry.