Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors
Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors
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DOI：
10.1021/acsnano.9b07687
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发表时间：
2020-01-01
期刊：
影响因子：
17.1
通讯作者：
Alexe, Marin
中科院分区：
文献类型：
--
作者：
Luo, Zheng-Dong;Xia, Xue;Alexe, Marin
神经形态视觉感觉和记忆系统，可以感知，处理和记忆光学信息，代表了人工智能和机器人自主导航的核心技术。具有生物计量光学感测和突触学习功能的优雅集成的光电突触可以是这种系统的硬件实现的基本元素。在这里，我们报告了一类铁电场效应忆阻晶体管的二维WS2半导体顶部的铁电PbZr0.2Ti0.8O3（PZT）薄膜的光电突触器件。WS2通道具有电压和光可控的忆阻开关，依赖于在下面的PZT层的光学和电学可调的铁电畴图案。因此，这些设备显示了光学驱动的突触功能的仿真，包括短期和长期的可塑性以及类脑学习规则的实现。将这些丰富的突触功能整合到一个单一的人工光电设备中，可以开发出能够进行光学信息传感和学习的未来神经形态电子器件。
Neuromorphic visual sensory and memory systems, which can perceive, process, and memorize optical information, represent core technology for artificial intelligence and robotics with autonomous navigation. An optoelectronic synapse with an elegant integration of biometric optical sensing and synaptic learning functions can be a fundamental element for the hardware-implementation of such systems. Here, we report a class of ferroelectric field-effect memristive transistors made of a two-dimensional WS2 semiconductor atop a ferroelectric PbZr0.2Ti0.8O3 (PZT) thin film for optoelectronic synaptic devices. The WS2 channel exhibits voltage- and light-controllable memristive switching, dependent on the optically and electrically tunable ferroelectric domain patterns in the underlying PZT layer. These devices consequently show the emulation of optically driven synaptic functionalities including both short- and long-term plasticity as well as the implementation of brainlike learning rules. Integration of these rich synaptic functionalities into one single artificial optoelectronic device could allow the development of future neuromorphic electronics capable of optical information sensing and learning.