Novel chemical-vapor deposition technique for the synthesis of high-quality single-crystal nanowires and nanotubes.
Novel chemical-vapor deposition technique for the synthesis of high-quality single-crystal nanowires and nanotubes.
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DOI：
10.1063/1.2166357
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发表时间：
2006-02
期刊：
影响因子：
--
通讯作者：
Maoqi He;S. Mohammad
中科院分区：
文献类型：
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作者：
Maoqi He;S. Mohammad
已经描述了化学气相沉积技术的强度和通用性，用于薄、长、均匀、单晶、高质量的纳米线生长，而不使用模板。值得注意的是，虽然高质量GaN薄膜的半峰全宽为4 meV，但GaN晶须的半峰全宽为9 meV，这证实了生长的晶须和纳米线的高质量。该方法的多功能性反映在其能够生产II-VI和III-V二元，三元，甚至第一次，四元纳米线在一个控制的方式。同样的多功能性使得能够实现纳米线和纳米管的立方相和六方相。化学气相沉积技术通常使用剧毒的砷化氢和磷化氢来合成砷基和磷基薄膜。目前的方法没有这个缺点;它可以在不使用这些有毒气体的情况下生产As和P基纳米线。该方法的一个显著特征是，由此合成的纳米线的性质强烈依赖于它们的形状、尺寸和几何形状，并且某些生长条件只能导致这样的形状和尺寸。
The strength and versatility of a chemical-vapor deposition technique for thin, long, uniform, single-crystal, good-quality nanowire growth, without the use of template, have been described. Remarkably, while the full width at half maximum of a high-quality GaN thin film is 4 meV, that of a GaN whisker is 9 meV, which confirms high quality of the grown whiskers and nanowires. The versatility of the method is reflected by its ability to produce II-VI and III-V binary, ternary, and even, for the first time, quaternary nanowires in a controlled manner. The same versatility enables the realization of both cubic and hexagonal phases of nanowires and nanotubes. Chemical-vapor deposition technique generally makes use of highly poisonous arsine and phosphine for the synthesis of As- and P-based films. The present one is free from this shortcoming; it can produce As- and P-based nanowires without the use of these poisonous gases. A notable feature of the method is that properties of nanowires thus synthesized depend strongly on their shape, size, and geometry, and that certain growth conditions can only lead to such shapes and sizes.