Nanofabrication for all-soft and high-density electronic devices based on liquid metal
Nanofabrication for all-soft and high-density electronic devices based on liquid metal
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DOI：
10.1038/s41467-020-14814-y
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发表时间：
2020-02-21
影响因子：
16.6
通讯作者：
Brand, Oliver
中科院分区：
文献类型：
--
作者：
Kim, Min-gu;Brown, Devin K.;Brand, Oliver
软材料合成和制造技术的创新导致了集成软电子器件的发展。这种软设备提供了与生物细胞相互作用的机会，模仿它们的软环境。然而，现有的制造技术无法制造出涉及单细胞的医疗保健和医疗应用所需的亚微米级软换能器。这项工作提出了一种纳米加工策略，以创建亚微米级，全软电子器件的基础上共晶镓铟合金（EGaIn）使用的混合方法，利用电子束光刻和软光刻。混合光刻工艺应用于双相结构，包括涂覆有EGaIn的金属粘附层，以产生嵌入弹性体材料中的软纳米/微结构。亚微米尺度的特征尺寸小至180 nm和1 μ m的线间距的EGaIn薄膜图案化的实现，从而在最高分辨率EGaIn图案化技术的日期。由此产生的柔软和可拉伸的EGaIn图案提供了目前无与伦比的分辨率，导电性和电子/布线密度的组合。
Innovations in soft material synthesis and fabrication technologies have led to the development of integrated soft electronic devices. Such soft devices offer opportunities to interact with biological cells, mimicking their soft environment. However, existing fabrication technologies cannot create the submicron-scale, soft transducers needed for healthcare and medical applications involving single cells. This work presents a nanofabrication strategy to create submicron-scale, all-soft electronic devices based on eutectic gallium-indium alloy (EGaIn) using a hybrid method utilizing electron-beam lithography and soft lithography. The hybrid lithography process is applied to a biphasic structure, comprising a metallic adhesion layer coated with EGaIn, to create soft nano/microstructures embedded in elastomeric materials. Submicron-scale EGaIn thin-film patterning with feature sizes as small as 180nm and 1 mu m line spacing was achieved, resulting in the highest resolution EGaIn patterning technique to date. The resulting soft and stretchable EGaIn patterns offer a currently unrivaled combination of resolution, electrical conductivity, and electronic/wiring density.