Properties and applications of cobalt-based Material produced by electron-beam-induced deposition
Properties and applications of cobalt-based Material produced by electron-beam-induced deposition
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DOI：
10.1116/1.1481040
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发表时间：
2002-07-01
期刊：
影响因子：
--
通讯作者：
Ng, V
中科院分区：
文献类型：
--
作者：
Lau, YM;Chee, PC;Ng, V
报道了用聚焦电子束沉积八羰基二钴的含钴材料。该材料含有30%至50%（原子）钴，其余为碳和氧，由嵌在碳质基体中的纳米晶金属颗粒组成。桥接两个电极的拱门被制造出来，以允许进行电流-电压（I-V）测量。材料电阻率随沉积光束电流的增大而显著降低，可达到低至45 μ m。经间接辐照生长的材料可产生高电阻率的材料，并可产生高电阻弓。在低温下，观察到三种不同的传导状态，在原点处I-V特性变平。在20 K时，观察到提示库仑阻断效应的阶梯状特征。该材料的磁力显微镜（MFM）图像表明其本质上是铁磁性的。介绍了该技术和材料在MFM针尖制造中的应用。使用选择性材料沉积作为碳纳米管生长的催化剂位点也被证明。(C) 2002年美国真空学会。
The deposition of cobalt-containing material from dicobalt octacarbonyl using a focused electron beam is reported. The material contains between 30% and 50% (atomic) cobalt, with the balance being carbon and oxygen, and comprises nanocrystalline metallic grains embedded in a carbonaceous matrix. Arches bridging two electrodes were fabricated to allow current-voltage (I-V) measurements to be conducted. The material resistivity decreases strongly with the deposition beam current, with values as low as 45 muOmegacm being attainable. Material growth by indirect irradiation is found to give rise to material of high resistivity and can result in highly resistive arches. At low temperatures, three distinctive conduction regimes are observed, with the I-V characteristics flattening out at the origin. At 20 K step-like features suggestive of Coulomb-blockade effects were observed. Magnetic force microscope (MFM) images of the material indicates that it is ferromagnetic in nature. The application of the technique and material to fabricate MFM tips is demonstrated. The use of selective material deposits as catalyst sites for the growth of carbon nanotubes is also demonstrated. (C) 2002 American Vacuum Society.