Properties of metal doped tungsten oxide thin films for NOx gas sensors grown by PLD method combined with sputtering process
Properties of metal doped tungsten oxide thin films for NOx gas sensors grown by PLD method combined with sputtering process
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DOI：
10.1016/j.snb.2003.12.052
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发表时间：
2004-06-01
影响因子：
8.4
通讯作者：
Ohshima, T
中科院分区：
文献类型：
--
作者：
Kawasaki, H;Ueda, T;Ohshima, T
采用脉冲Nd:YAG（532 nm）激光沉积方法结合去溅射，通过新开发的制备系统合成了基于氧化钨（WO3）薄膜并掺杂不同量的金（An）或钯（Pd）的气体传感器。通过X射线衍射系统测量所制备的Au掺杂WO3（WO3-Au）薄膜的晶体结构和晶体取向，表明存在明显的WO3（001）和（201）峰以及WO3（120）、（111）、（002）和（112）弱峰。在 300°C 的工作温度下，WO3-Au 薄膜对 200 ppm NO2 的最大灵敏度约为 69，WO3-Pd 薄膜则约为 24。这些最大灵敏度高于未掺杂WO3传感器的灵敏度约为17。这可能是由于其电子和/或化学敏化效应。 (C) 2004 Elsevier B.V. 保留所有权利。
The gas sensors based on tungsten oxide (WO3) thin films and doped with different amount of gold (An) or palladium (Pd) were synthesized by a new developed preparation system using the pulsed Nd:YAG (532 nm) laser deposition method combined with de sputtering. The crystalline structure and crystallographic orientation of the prepared Au doped WO3 (WO3-Au) thin films, measured by X-ray diffraction system, suggested that there were distinct peaks of WO3 (001) and (201) and weakpeaks of WO3 (120), (111),(002) and (112). The maximum sensitivity for 200 ppm NO2 were approximately 69 for WO3-Au thin film and 24 for WO3-Pd thin film at the operating temperature of 300degreesC, respectively. These maximum sensitivities are higher than that of the non-doped WO3 sensor which sensitivity is about 17. This may be due to its electronic and/or chemical sensitization effect. (C) 2004 Elsevier B.V. All rights reserved.