Control of Strain Relaxation Behavior of Ge_<1-x> Sn_x Layers : Toward Tensile-Strained Ge Layers with Strain Value over 1%
Control of Strain Relaxation Behavior of Ge_<1-x> Sn_x Layers : Toward Tensile-Strained Ge Layers with Strain Value over 1%
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Control%20of%20Strain%20Relaxation%20Behavior%20of%20Ge_<1-x>%20Sn_x%20Layers%20:%20Toward%20Tensile-Strained%20Ge%20Layers%20with%20Strain%20Value%20over%201%
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
志村洋介
中科院分区：
文献类型：
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作者：
Y.Shimura;et al;望月健太;中村茉里香;浅野孝典;中塚理;竹内正太郎;志村洋介;西村剛;志村洋介;中塚理;志村洋介;財満鎭明;志村洋介;西村剛;中塚理;Benjamin Vincent;竹内正太郎;志村洋介
