Resist Outgassing by EUV Irradiation
Resist Outgassing by EUV Irradiation
复制标题
抵抗 EUV 辐射的脱气
DOI：
10.2494/photopolymer.14.555
复制
发表时间：
2001
影响因子：
0.8
通讯作者：
M. Sasago
中科院分区：
文献类型：
--
作者：
Takeo Watanabe;K. Hamamoto;H. Kinoshita;H. Tsubakino;H. Hada;H. Komano;M. Endo;M. Sasago
极紫外（EUV）光刻要求在真空环境下曝光。烃类放气离子种类影响掩膜和成像镜在极紫外光照射下的反射率。研究了用于EUVL的非化学放大和化学放大光刻膜的光致放气。发现了在极紫外光照射下具有低放气特性的化学放大正音抗蚀剂。此外，通过抗蚀剂放气研究发现，在极紫外光照射下发生了光分解。
Extreme ultraviolet (EUV) lithography requires the vacuum environment for the exposure. The hydrocarbons outgassing ions species affects the reflectivity of the mask and the imaging mirror under EUV irradiation. The photo-induced outgassing was investigated for both the non-chemically amplified resists and the chemically amplified resists which can be used for EUVL. We found out the chemically amplifed positive tone resist which has low outgassing characteristics under the EUV irradiation. Furthermore, it is found that the photodecomposition occurred under EUV irradiation from the resist outgassing investigation.