Synthesis and Transport Properties of Degenerate P-Type Nb-Doped WS2 Monolayers
Synthesis and Transport Properties of Degenerate P-Type Nb-Doped WS2 Monolayers
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简并 P 型 Nb 掺杂 WS2 单分子层的合成及输运性能
DOI：
10.1021/acs.chemmater.9b00913
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发表时间：
2019-05-14
影响因子：
8.6
通讯作者：
Liu, Song
中科院分区：
文献类型：
--
作者：
Jin, Yuanyuan;Zeng, Zanyang;Liu, Song
替代掺杂已被证明是设计过渡金属二硫属化物带隙、输运特性和磁性的有效途径。在此，我们展示了通过化学气相沉积技术用铌对单层二硫化钨（WS2）进行替代掺杂。扫描透射电子显微镜证实Nb成功取代了WS2晶格中的W原子。此外，当引入不同浓度的铌时，光致发光显示出显着的红移，这与密度泛函理论计算一致。电气测量揭示了 Nb 掺杂 WS2 场效应晶体管的简并 p 型半导体行为。本研究中p型WS2的成功合成为扩展二维材料的电子和光子工程提供了一种有前景的方法。
Substitutional doping has been proven to be an effective route to engineer band gap, transport characteristics, and magnetism in transition metal dichalcogenides. Herein, we demonstrate substitutional doping of monolayer tungsten disulfide (WS2) with Nb via the chemical vapor deposition technique. Scanning transmission electron microscopy confirms that Nb successfully substituted the W atom in the WS2 lattice. Moreover, photoluminescence indicates a significant red shift when different concentrations of Nb are introduced, in agreement with density functional theory calculations. Electrical measurements reveal the degenerate p-type semiconductor behavior of Nb-doped WS2 field-effect transistors. The successful synthesis of p-type WS2 in this study provides a promising method to expand the electronic and photonic engineering of two-dimensional materials.