Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well
Electrorefractive Effect in GaInNAs/GaAs Five-Layer Asymmetric Coupled Quantum Well
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GaInNAs/GaAs五层不对称耦合量子阱中的电折射效应
DOI：
10.1143/jjap.48.04c154
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
and K. Tada
中科院分区：
文献类型：
--
作者：
M. Fukuoka;T. Toya;Y. Sawai;T. Arakawa;and K. Tada
提出了一种1.3 μ m波段GaInNAs/GaAs五层非对称耦合量子阱（FACQW）结构，并进行了理论分析.采用基于k· p微扰理论的Luttinger-Kohn哈密顿量和非变分方法对FACQW的价带结构进行了分析。GaInNAs/GaAsFACQW具有独特的量子限制Stark效应，在远离吸收边的宽透明波长范围内，在小电场作用下可产生较大的电折射率变化（Δn/ΔF= 3.9× 10- 4cm/kV）。这一特性与在1.55 μ m波长范围内工作的InGaAs/InAlAs和InGaAsP FACQW相当。GaInNAs/GaAs FACQW有望实现基于1.3 μ m波长范围相移的超宽带、超快光调制器和开关等功能器件。1 mm相位调制器的驱动电压估计为0.4 V。
A GaInNAs/GaAs five-layer asymmetric coupled quantum well (FACQW) in the 1.3-µm-wavelength region was proposed and theoretically analyzed. The valence band structures of the FACQW were analyzed using the Luttinger–Kohn Hamiltonian based on the k· p perturbation theory and a nonvariational method. The GaInNAs/GaAs FACQW can exhibit a unique behavior of the quantum confined Stark effect, leading to a large electrorefractive index change (Δn/ΔF= 3.9× 10-4 cm/kV) at a small electric field in a wide-transparency-wavelength region far from the absorption edge. This characteristic is comparable to InGaAs/InAlAs and InGaAsP FACQWs operated in the 1.55-µm-wavelength region. The GaInNAs/GaAs FACQW is expected to realize ultrawide-band, ultrafast optical modulators and switches and other functional devices based on the phase shift in the 1.3-µm-wavelength region. The driving voltage of a 1 mm-phase modulator is estimated to be 0.4 V.