Achieving Surface Quantum Oscillations in Topological Insulator Thin Films of Bi2Se3
Achieving Surface Quantum Oscillations in Topological Insulator Thin Films of Bi2Se3
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DOI：
10.1002/adma.201201827
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发表时间：
2012-11
影响因子：
29.4
通讯作者：
A. Taskin;S. Sasaki;K. Segawa;Y. Ando
中科院分区：
文献类型：
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作者：
A. Taskin;S. Sasaki;K. Segawa;Y. Ando
三维（3D）拓扑绝缘体（TI）实现了一种新的物质量子态，其中绝缘体态与金属表面态共存[ 1 ]，这是由于价带波函数所跨越的希尔伯特空间的非平凡拓扑。TI的表面态是特殊的，因为它们是由自旋过滤的，无质量的狄拉克费米子，持有新的自旋电子学和拓扑量子计算的承诺。[ 2-4 ]
IO N The three-dimensional (3D) topological insulators (TIs) realize a new quantum state of matter where insulating bulk states coexist with metallic surface states [ 1 ] due to a nontrivial topology of the Hilbert space spanned by the valence band wavefunctions. The surface states of TIs are peculiar in that they are comprised of spin-fi ltered, massless Dirac fermions that hold promise for novel spintronics and topological quantum computations. [ 2–4 ]