Thin Film Field-Effect Phototransistors from Bandgap-Tunable, Solution-Processed, Few-Layer Reduced Graphene Oxide Films
Thin Film Field-Effect Phototransistors from Bandgap-Tunable, Solution-Processed, Few-Layer Reduced Graphene Oxide Films
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DOI：
10.1002/adma.201002229
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发表时间：
2010-11-16
影响因子：
29.4
通讯作者：
Zheng, Zijian
中科院分区：
文献类型：
--
作者：
Chang, Haixin;Sun, Zhenhua;Zheng, Zijian
薄膜场效应光电晶体管（FET）可以从带隙可调，溶液处理，少层还原氧化石墨烯（FRGO）薄膜开发。大面积的FRGO薄膜的可调带隙范围从2.2 eV到0.5 eV，可以很容易地通过溶液处理技术，如旋涂实现。FRGO FET的电子和光电性能被发现与它们的带隙能量密切相关。这种光电晶体管在光电探测领域具有很大的应用潜力。
Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.