Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surfaces
Enhanced radiative recombination probability in AlGaN quantum wires on (0001) vicinal surfaces
复制标题
(0001) 邻近表面上 AlGaN 量子线的辐射复合概率增强
DOI：
10.1117/12.2237606
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
and Y. Kawakami
中科院分区：
文献类型：
--
作者：
M. Hayakawa;Y. Hayashi;S. Ichikawa;M. Funato;and Y. Kawakami
We propose to use quantum wires (QWRs) instead of quantum wells (QWs) to improve the internal quantum efficiency of AlGaN UV emitters. Crystal growth of AlGaN on the AlN vicinal (0001) surface with bunched steps creates Al-less AlGaN QWRs at the bunched step edges. Cathodoluminescence maps indicate the formation of the potential minima along the step edges. Photoluminescence spectroscopy reveals that the thermal quenching in the QWRs is suppressed by approximately one order of magnitude, compared with that in conventional (0001) AlGaN/AlN QWs, and the spectra are dominated by the QWR emissions at room temperature. We attribute the superior optical property of the AlGaN QWRs to the enhanced radiative recombination processes.
