Parasitic extraction procedure for silicon carbide power modules
Parasitic extraction procedure for silicon carbide power modules
复制标题
碳化硅功率模块的寄生提取程序
DOI：
10.1109/iwipp.2015.7295986
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
R. Graves
中科院分区：
文献类型：
--
作者：
A. Lemmon;R. Graves
寄生阻抗在确定基于宽带隙半导体的电力电子应用的可实现性能方面起着重要作用。与基于传统器件的应用不同，这类新的应用具有“近RF”域中的频谱内容，可以通过激发这些寄生阻抗中的谐振来揭示异常系统行为。为了理解和减轻这种行为，重要的是，应用设计人员有一些方法来估计多芯片电源模块（MCPM）内的互连阻抗。本文提出了一种简单的方法，用于提取内的MCPM结构的寄生阻抗的估计，没有先验知识的模块的几何形状或互连的细节。所提出的方法的实际效用是通过执行一个案例研究，涉及市售的MCPM证明;和由此产生的阻抗估计经验验证，通过开关实验。
Parasitic impedances play a significant role in determining the achievable performance of power electronics applications based on wide band-gap semiconductors. Unlike applications based on traditional devices, this new class of applications has spectral content in the "near-RF" domain, which can reveal anomalous system behavior by exciting resonances in these parasitic impedances. To understand and mitigate this behavior, it is important that application designers have some means for estimating the interconnect impedances within multi-chip power modules (MCPM's). This paper proposes a straightforward methodology for extracting estimates of parasitic impedances within the MCPM structure, without a-priori knowledge of the module geometry or interconnection details. The practical utility of the proposed approach is demonstrated through the execution of a case study involving a commercially-available MCPM; and the resulting impedance estimates are empirically validated through switching experiments.