Enhanced performance of p-type SnOx thin film transistors through defect compensation
Enhanced performance of p-type SnOx thin film transistors through defect compensation
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通过缺陷补偿增强 p 型 SnOx 薄膜晶体管的性能
DOI：
10.1088/1361-648x/ac8464
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Changzhong Jiang
中科院分区：
文献类型：
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作者：
Wei Zhang;Ruohao Hong;Wenjing Qin;Yawei Lv;Jianmin Ma;Lei Liao;Kenli Li;Changzhong Jiang
抽象。由于Sn独特的最外层轨道，一氧化锡（SnO）中的空穴载流子具有小的有效质量和在氧化物半导体中的高迁移率，使其成为薄膜场效应晶体管（TFT）的有前途的p沟道材料。然而，实验中Sn空位引起的场效应迁移率劣化和阈值电压漂移极大地限制了其在互补金属氧化物半导体（CMOS）晶体管中的应用。研究了Al掺杂对SnO中空位缺陷补偿的内在机理。X.结合实验和密度泛函理论（DFT）对薄膜进行了研究。掺杂是通过氩（Ar）等离子体处理沉积到SnO上的Al2O3来实现的。X.膜，其中Al2O3提供表面钝化和Al掺杂源。实验结果表明，在SnO中具有较宽的V. th调制范围（6.08至−19.77 V）和显著的迁移率增强（11.56 cm 2 V −1s−1）。X. Ar等离子体掺杂Al后的TFT。DFT结果表明，Al在SnO和SnO2链段中最可能的位置是对Sn空位和间隙的补偿。补偿将产生n型掺杂效应，并通过降低空穴有效质量（m）来改善空穴载流子传输。h），这是导致器件性能变化的主要原因，而SnO2链段中的间隙原子对薄膜的价态输运几乎没有影响。缺陷补偿适用于SnO的电子性质调制，朝向高性能CMOS应用。
Abstract. Due to the unique outermost orbitals of Sn, hole carriers in tin monoxide (SnO) possess small effective mass and high mobility among oxide semiconductors, making it a promising p-channel material for thin film field-effect transistors (TFTs). However, the Sn vacancy induced field-effect mobility deterioration and threshold voltage (V. th) shift in experiments greatly limit its application in complementary metal-oxide-semiconductor (CMOS) transistors. In this study, the internal mechanism of vacancy defect compensation by aluminum (Al) doping in SnO. x. film is studied combining experiments with the density functional theory (DFT). The doping is achieved by an argon (Ar) plasma treatment of Al2O3 deposited onto the SnO. x. film, in which the Al2O3 provides both the surface passivation and Al doping source. Experimental results show a wide V. th modulation range (6.08 to −19.77 V) and notable mobility enhancement (11.56 cm2V−1s−1) in the SnO. x. TFTs after the Al doping by Ar plasma. DFT results reveal that the most possible positions of Al in SnO and SnO2 segments are the compensation to Sn vacancy and interstitial. The compensation will create an n-type doping effect and improve the hole carrier transport by reducing the hole effective mass (m. h), which is responsible for the device performance variation, while the interstitial in the SnO2 segment can hardly affect the valence transport of the film. The defect compensation is suitable for the electronic property modulation of SnO towards the high-performance CMOS application.