Intrinsic Characteristics of Bi(Zn_<1/2>Ti_<1/2>)O_3-substituted Pb(Zr_<0.4>Ti_<0.6>)O_3 Thin Films
Intrinsic Characteristics of Bi(Zn_<1/2>Ti_<1/2>)O_3-substituted Pb(Zr_<0.4>Ti_<0.6>)O_3 Thin Films
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Bi(Zn_<1/2>Ti_<1/2>)O_3取代Pb(Zr_<0.4>Ti_<0.6>)O_3薄膜的本征特性
DOI：
10.1088/1757-899x/18/9/092008
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
H.Funakubo
中科院分区：
文献类型：
--
作者：
M.T.Chentir;Yoshitaka Ehara;Y.Sugiyama;Y.Tasaki;H.Ishiwara;H.Funakubo
本文研究了Bi（Zn 1/2 Ti 1/2）O3（BZT）对溶胶-凝胶法制备的Pb（Zr0.4Ti0.6）O3（PZT）薄膜晶体学和铁电性能的影响。随着BZT含量的增加，晶格参数的收缩，导致自发极化率的降低。这一结果与预测的自发极化演化与单位细胞四方性是一致的。
In this paper we investigated the intrinsic impact of Bi (Zn 1/2 Ti 1/2) O 3 (BZT) addition on the crystallographic and ferroelectric properties of Pb (Zr 0.4 Ti 0.6) O 3 (PZT) thin films deposited by sol-gel technique. We could emphasis the shrinkage of lattice parameters, leading to a decrease of spontaneous polarization, with increasingly BZT content. This result is coherent with predicted evolution of spontaneous polarization with unit cell tetragonality.