Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere
Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere
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DOI：
10.1038/ncomms7647
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发表时间：
2015-04-01
影响因子：
16.6
通讯作者：
Ozyilmaz, Barbaros
中科院分区：
文献类型：
--
作者：
Doganov, Rostislav A.;O'Farrell, Eoin C. T.;Ozyilmaz, Barbaros
超薄黑磷是一种具有相当大带隙的二维半导体。其优异的电子性能使其在晶体管、逻辑和光电器件中的应用具有吸引力。然而，它也是第一个被广泛研究的在暴露于环境空气后发生降解的二维材料。因此，需要一种钝化方法来研究固有的材料特性，了解氧化如何影响物理特性，并使磷烯的应用成为可能。在这里，我们证明了原子级薄的石墨烯和六方氮化硼可以用于钝化炭黑磷。我们报告说，在惰性气体环境中钝化的少层原始黑磷通道，在没有任何事先暴露于空气的情况下，表现出极大改善的n型电荷传输，从而产生对称的电子和空穴跨导特性。
Ultrathin black phosphorus is a two-dimensional semiconductor with a sizeable band gap. Its excellent electronic properties make it attractive for applications in transistor, logic and optoelectronic devices. However, it is also the first widely investigated two-dimensional material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical properties and enable applications of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole transconductance characteristics.