Photoreflectance spectroscopy of the chalcopyrite semiconductor AgInS2 for ordinary and extraordinary rays
Photoreflectance spectroscopy of the chalcopyrite semiconductor AgInS2 for ordinary and extraordinary rays
复制标题
黄铜矿半导体 AgInS2 普通射线和非寻常射线的光反射光谱
DOI：
10.1007/s00339-016-0147-z
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
S. Ozaki and Y. Horikoshi
中科院分区：
文献类型：
--
作者：
松崎公洋;山田洋明;田中俊彦;岡本昌幸;S. Ozaki and Y. Horikoshi
在 10 到 300 K 之间的温度下，在黄铜矿半导体二硫化银铟 () 上测量垂直于 ($${\varvec{E}} \bot {c}$$) 和平行于 c 轴 ($${\varvec{E}} \vert \vert {c}$$) 的光偏振 $${\varvec{E}}$$ 的光反射光谱。测量的光反射光谱揭示了不同的结构1.8–2.1 eV。最低带隙能量 和of 在低温 (140 K) 下表现出异常的温度依赖性。发现 () 随着温度从 10 K 增加到 140 K 而增加，并随着温度的进一步增加而减少。通过考虑热膨胀和电子-声子相互作用的影响，这一结果已被成功解释。在T= 10 K时，自旋轨道和晶体场分裂参数分别确定为meV和meV，并从电子能带结构后果的角度进行了讨论。还提出了自旋轨道和晶体场分裂参数的温度依赖性。
Photoreflectance spectra have been measured on the chalcopyrite semiconductor silver indium disulfide () for light polarization $${\varvec{E}}$$ perpendicular ($${\varvec{E}} \bot {c}$$) and parallel to thec-axis ($${\varvec{E}} \vert \vert {c}$$) at temperature between 10 and 300 K. The measured photoreflectance spectra revealed distinct structures at 1.8–2.1 eV. The lowest bandgap energies,, andofshow unusual temperature dependence at low temperatures (140 K). The() is found to increase with increasing temperature from 10 to140 K and decreases with a further increase in temperature. This result has been successfully explained by taking into account the effects of thermal expansion and electron–phonon interaction. The spin–orbit and crystal-field splitting parameters ofare determined to bemeV andmeV atT= 10 K, respectively, and are discussed from an aspect of the electronic energy band structure consequences. The temperature dependence of spin–orbit and crystal-field splitting parameters ofwas also presented.