Comparison of InAs nanowire conductivity: influence of growth method and structure
Comparison of InAs nanowire conductivity: influence of growth method and structure
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InAs纳米线电导率比较：生长方法和结构的影响
DOI：
10.1002/pssc.201100282
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通讯作者：
D. Grützmacher
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作者：
K. Sladek;A. Winden;S. Wirths;K. Weis;C. Blömers;Ö. Gül;T. Grap;S. Lenk;M. von der Ahe;T. E. Weirich;H. Hardtdegen;M. I. Lepsa;A. Lysov;Z.‐A. Li;W. Prost;F.‐J. Tegude;H. Lüth;T. Schäpers;D. Grützmacher
用三种不同的方法沉积名义上未掺杂的InAs纳米线的电导率和晶体结构。2.选择性区金属有机气相外延（SA MOVPE）；金辅助蒸汽液体固体（VLS） MOVPE和3。研究了无外源催化剂的VLS分子束外延（MBE）。分析了层错和不同生长条件对电导率的影响，确定了主要影响因素。在晶体结构方面，VLS MOVPE法和VLS MBE法沉积的纳米线表现相似，均为闪锌矿（ZB）相，而SA MOVPE法沉积的纳米线在生长过程中具有较高的层错密度和较高的纤锌矿（WZ）含量，且生长速率降低。然而，与其他两种电线类型相比，VLS MOVPE沉积的电线的电导率要高得多，并且在统计上分散性更低。观察和讨论了VLS MOVPE中名义上未掺杂的导线与先前报道的SA MOVPE中有意掺杂的导线之间的电相似性。（©2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
The conductivity and crystal structure of nominally undoped InAs nanowires deposited by three different methods – 1. selective area metal organic vapor phase epitaxy (SA MOVPE), 2. gold assisted vapor liquid solid (VLS) MOVPE and 3. extrinsic catalyst free VLS molecular beam epitaxy (MBE) – is investigated. The influence on conductivity by stacking faults and different growth conditions is analyzed to determine the main impact. It is found that in terms of crystal structure, nanowires deposited by VLS MOVPE and VLS MBE behave similarly showing a zinc blende (ZB) phase while nanowires deposited by SA MOVPE feature a high density of stacking faults and a tendency to higher amounts of wurtzite (WZ) when grown with a decreased growth rate. However, the conductivity of wires deposited by VLS MOVPE is found to be much higher and statistically less dispersive compared to the other two wire types. An electrical similarity between nominally undoped wires in VLS MOVPE and previously reported intentionally doped wires in SA MOVPE is observed and discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)