Radiation Damage of SiO2 Surface Induced by Vacuum Ultraviolet Photons of High-Density Plasma
Radiation Damage of SiO2 Surface Induced by Vacuum Ultraviolet Photons of High-Density Plasma
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高密度等离子体真空紫外光子对SiO2表面的辐射损伤
DOI：
10.1143/jjap.33.2175
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发表时间：
1994
影响因子：
1.5
通讯作者：
Shingo Kadomura Shingo Kadomura
中科院分区：
文献类型：
--
作者：
T. Tatsumi;Seiichi Fukuda Seiichi Fukuda;Shingo Kadomura Shingo Kadomura
在HF湿处理过程中，由于暴露于等离子体中进行栅极刻蚀，导致了栅极SiO2表面损伤层的形成，从而导致了SiO2刻蚀速率的增加。对电子回旋共振（ECR）等离子体系统和螺旋等离子体系统产生的不同气体等离子体的真空紫外（VUV）光子效应进行了研究。结果表明，真空紫外辐射损伤层的深度与辐射能量和穿透深度有关。受损层随着离表面的距离呈指数增长，并且非常无序，使其更容易受到HF蚀刻剂的影响。
The formation of a surface-damaged layer of gate SiO2 induced by exposure to plasma for gate etching led to the increase in etch rate of SiO2 during HF wet treatment. The effects of vacuum ultraviolet (VUV) photons from various gas plasmas generated by an electron cyclotron resonance (ECR) plasma system and a helicon plasma system were evaluated. It was found that the depth of the damaged layer depends on the energy and penetration depth of VUV radiation. The damaged layer grew exponentially with distance from the surface and was extremely disordered, making it more susceptible to the HF etchant.