The contribution of distinct response characteristics of Fe atoms to switching of magnetic anisotropy in Fe4N/MgO heterostructures
The contribution of distinct response characteristics of Fe atoms to switching of magnetic anisotropy in Fe4N/MgO heterostructures
复制标题
Fe4N/MgO 异质结构中 Fe 原子的独特响应特性对磁各向异性切换的贡献
DOI：
10.1063/1.5048317
复制
发表时间：
2018-09-24
影响因子：
4
通讯作者：
Bai, H. L.
中科院分区：
文献类型：
--
作者：
Li, Z. R.;Mi, W. B.;Bai, H. L.
磁各向异性的调制对于实现节能存储器件是非常有前途的。在这项工作中，我们调查的界面氧化和电场的Fe 4 N/MgO异质结的磁各向异性的第一性原理计算的影响。Fe 4 N/MgO异质结构表现出面内磁各向异性，而界面氧化诱导垂直磁各向异性。此外，实现了磁场控制的磁各向异性开关。Fe 4 N中FeI和FeII原子的磁各向异性对界面氧化和电场具有明显的响应特征，其中FeII原子更敏感，其磁各向异性从面内方向反转到面外方向。这表明Fe 4 N/MgO异质结的磁各向异性具有可调性，为Fe 4 N基磁性隧道结的进一步应用提供了可能，磁各向异性的调制对于实现高能效存储器件具有很大的应用前景。在这项工作中，我们调查的界面氧化和电场的Fe 4 N/MgO异质结的磁各向异性的第一性原理计算的影响。Fe 4 N/MgO异质结构表现出面内磁各向异性，而界面氧化诱导垂直磁各向异性。此外，实现了磁场控制的磁各向异性开关。Fe 4 N中FeI和FeII原子的磁各向异性对界面氧化和电场具有明显的响应特征，其中FeII原子更敏感，其磁各向异性从面内方向反转到面外方向。这表明Fe 4 N/MgO异质结的磁各向异性是可调的，为Fe 4 N基磁性隧道结的进一步应用提供了可能。
The modulation of magnetic anisotropy is very promising for the realization of energy-efficient memory devices. In this work, we investigate the effects of interfacial oxidation and electric field on the magnetic anisotropy of the Fe4N/MgO heterostructure using first-principles calculations. The Fe4N/MgO heterostructure exhibits in-plane magnetic anisotropy, while interfacial oxidation induces a perpendicular magnetic anisotropy. In addition, the electric field-controlled switching of magnetic anisotropy is achieved. The magnetic anisotropy of FeI and FeII atoms in Fe4N has distinct response characteristics to interfacial oxidation and electric field, where the FeII atom is more sensitive and its magnetic anisotropy is reversed from the in-plane to the out-of-plane direction. This suggests the tunability of magnetic anisotropy in the Fe4N/MgO heterostructure, which offers the possibility for further application of the Fe4N-based magnetic tunnel junction.The modulation of magnetic anisotropy is very promising for the realization of energy-efficient memory devices. In this work, we investigate the effects of interfacial oxidation and electric field on the magnetic anisotropy of the Fe4N/MgO heterostructure using first-principles calculations. The Fe4N/MgO heterostructure exhibits in-plane magnetic anisotropy, while interfacial oxidation induces a perpendicular magnetic anisotropy. In addition, the electric field-controlled switching of magnetic anisotropy is achieved. The magnetic anisotropy of FeI and FeII atoms in Fe4N has distinct response characteristics to interfacial oxidation and electric field, where the FeII atom is more sensitive and its magnetic anisotropy is reversed from the in-plane to the out-of-plane direction. This suggests the tunability of magnetic anisotropy in the Fe4N/MgO heterostructure, which offers the possibility for further application of the Fe4N-based magnetic tunnel junction.