Stitch aware detailed placement for multiple e-beam lithography
Stitch aware detailed placement for multiple e-beam lithography
复制标题
用于多重电子束光刻的缝合感知详细放置
DOI：
10.1109/aspdac.2016.7428009
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
D. Pan
中科院分区：
文献类型：
--
作者：
Yibo Lin;Bei Yu;Y. Zou;Zhuo Li;C. Alpert;D. Pan
作为下一代光刻的有前途的候选者，多重电子束光刻（MEBL）能够使用平行束印刷来提高制造产量。在MEBL中，布局被分割成条带，并且布局图案被条带边界切割，然后并行打印所有条带。如果过孔图案或垂直长线与针脚重叠，则可能会因所谓的针脚错误而导致印刷质量差；那么电路性能可能会下降。在本文中，我们提出了对缝合感知详细放置的全面研究，以同时最小化缝合误差并优化传统目标，例如线长和密度。实验结果表明，我们的算法在修改后的 ICCAD 2014 基准上非常有效，可以保证零缝合误差，同时缩放的半周长线长与最先进的详细放置器非常相似。
As a promising candidate for next generation lithography, multiple e-beam lithography (MEBL) is able to improve manufacturing throughput using parallel beam printing. In MEBL, a layout is split into stripes and the layout patterns are cut by stripe boundaries, then all the stripes are printed in parallel. If a via pattern or a vertical long wire is overlapping with a stitch, it may suffer from poor printing quality due to the so called stitch error; then the circuit performance may be degraded. In this paper, we propose a comprehensive study on the stitch aware detailed placement to simultaneously minimize the stitch error and optimize traditional objectives, e.g., wirelength and density. Experimental results show that our algorithms are very effective on modified ICCAD 2014 benchmarks that zero stitch error is guaranteed while the scaled half-perimeter wirelength is very comparable to a state-of-the-art detailed placer.