High-temperature slow crack growth of silicon carbide determined by constant-stress-rate and constant-stress testing
High-temperature slow crack growth of silicon carbide determined by constant-stress-rate and constant-stress testing
复制标题
恒应力速率和恒应力试验测定碳化硅高温缓慢裂纹扩展
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
N. Nemeth
中科院分区：
文献类型：
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作者：
Sung Choi;J. Salem;N. Nemeth
热压碳化硅的高温慢裂纹扩展行为采用恒定应力速率（“动态疲劳”）和恒定应力（“静态疲劳”）测试，在1300°C的空气中弯曲。发现缓慢裂纹扩展是与材料失效相关的控制机制。采用个体数据法、威布尔中值法、算术平均值法和中值偏差法四种估计方法确定裂纹缓慢扩展参数。在恒应力速率试验中，四种估计方法的一致性较好，慢裂纹扩展参数n的变化较小，范围在28 ~ 36之间。相比之下，在恒应力测试中，四种估计方法之间的n差异显著，n=16 ~ 32的范围比较宽。©1998 Chapman & Hall
High-temperature slow-crack-growth behaviour of hot-pressed silicon carbide was determined using both constant-stress-rate (“dynamic fatigue”) and constant-stress (“static fatigue”) testing in flexure at 1300 °C in air. Slow crack growth was found to be a governing mechanism associated with failure of the material. Four estimation methods such as the individual data, the Weibull median, the arithmetic mean and the median deviation methods were used to determine the slow crack growth parameters. The four estimation methods were in good agreement for the constant-stress-rate testing with a small variation in the slow-crack-growth parameter, n, ranging from 28 to 36. By contrast, the variation in n between the four estimation methods was significant in the constant-stress testing with a somewhat wide range of n=16 to 32. © 1998 Chapman & Hall