Nanosecond Spin Coherence Time of Nonradiative Excitons in GaAs/AlGaAs Quantum Wells.
Nanosecond Spin Coherence Time of Nonradiative Excitons in GaAs/AlGaAs Quantum Wells.
复制标题
GaAs/AlGaAs 量子阱中非辐射激子的纳秒自旋相干时间。
DOI：
10.1103/physrevlett.122.147401
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发表时间：
2018
影响因子：
8.6
通讯作者：
M. Bayer
中科院分区：
文献类型：
--
作者：
A. Trifonov;E. Khramtsov;K. Kavokin;I. Ignatiev;A. Kavokin;Y. Efimov;S. A. Eliseev;P. Y. Shapochkin;M. Bayer
我们报道了一种基于非辐射激子的纳秒时间尺度自旋存储器的实验证据。这种效应表现在磁场诱导的光学活性（辐射）激子能量的振荡中。在横向磁场中，GaAs/AlGaAs量子阱结构的光谱分辨泵浦探测技术检测到的振荡持续超过一个时间尺度，这是数量级长于系统中的特征退相干时间。这种效应归因于旋光激子和非旋光激子之间的自旋相关的电子-电子交换相互作用。属于非辐射激子的电子的自旋弛豫时间似乎比空穴的自旋弛豫时间长得多。
We report on the experimental evidence for a nanosecond timescale spin memory based on nonradiative excitons with large in-plane wave vector. The effect manifests itself in magnetic-field-induced oscillations of the energy of the optically active (radiative) excitons. The oscillations detected by a spectrally resolved pump-probe technique applied to a GaAs/AlGaAs quantum well structure in a transverse magnetic field persist over a timescale, which is orders of magnitude longer than the characteristic decoherence time in the system. The effect is attributed to the spin-dependent electron-electron exchange interaction of the optically active and inactive excitons. The spin relaxation time of the electrons belonging to nonradiative excitons appears to be much longer than the hole spin relaxation time.
影响因子：
19.6
作者：
Poem, E.;Kodriano, Y.;Gershoni, D.
通讯作者：
Gershoni, D.