Annealing effects in n+–p strip detectors irradiated with high neutron fluences☆
Annealing effects in n+–p strip detectors irradiated with high neutron fluences☆
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高中子注量辐照下的 n+–p 条带探测器的退火效应☆
DOI：
10.1016/j.nima.2010.11.057
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发表时间：
2011
影响因子：
1.4
通讯作者：
M. Mikuž
中科院分区：
文献类型：
--
作者：
I. Mandić;V. Cindro;G. Kramberger;M. Mikuž
通过在 p 型硅块 (n+–p) 上植入 n 型读出条制成的微型微带探测器，用反应堆中子辐照至注量为 5×1015neq/cm2。它们的电荷收集特性通过来自 90Sr 源的快速电子产生的信号进行测量，并由 SCT128A 芯片读出。测量所收集的电荷和检测器电流高达高偏置电压（1400V），在该电压下可以观察到电荷倍增的迹象。探测器在 60°C 下进行连续退火步骤，总时间为 5040 分钟。在高偏压下测量了长时间退火后收集的电荷的增加。在漏电流中观察到类似的效应，在高电压下，漏电流随着反向退火时间的增加而增加。反向退火会导致更高的空间电荷浓度，从而导致 p-n 结附近的电场值更高。结果是更大的乘法导致收集的电荷和漏电流增加。
Miniature micro-strip detectors made by implanting n-type readout strips on p-type silicon bulk (n+–p) were irradiated with reactor neutrons up to fluences of 5×1015neq/cm2. Their charge collection properties were measured with signals caused by fast electrons from90Sr source and read out by SCT128A chip. Collected charge and detector current were measured up to high bias voltages (1400V) at which signs of charge multiplication can be observed. Detectors were submitted to successive annealing steps at 60°C up to total time of 5040min. Increase of collected charge after long annealing times was measured at high bias voltages. A similar effect was observed in the leakage current, which at high voltages increased with reverse-annealing time. Reverse annealing leads to higher space charge concentrations and therefore to higher values of electric field near the p–n junction. The consequence is larger multiplication resulting in increase of collected charge and leakage current.