Electronic Impurity Doping in CdSe Nanocrystals
Electronic Impurity Doping in CdSe Nanocrystals
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DOI：
10.1021/nl300880g
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发表时间：
2012-05-01
期刊：
影响因子：
10.8
通讯作者：
Norris, David J.
中科院分区：
文献类型：
--
作者：
Sahu, Ayaskanta;Kang, Moon Sung;Norris, David J.
我们用Ag掺杂CdSe纳米晶，并研究其光学和电学性质。兴奋剂不仅导致了戏剧性的变化，而且导致了令人惊讶的复杂性。每纳米粒子仅添加几个Ag原子就能大大增强荧光，达到与核-壳纳米晶体相当的效率。虽然银预计是一个替代受体，荧光和费米能级的非单调趋势表明，银的变化从间隙（n型）的替代（p型）杂质与掺杂的增加。
We dope CdSe nanocrystals with Ag impurities and investigate their optical and electrical properties. Doping leads not only to dramatic changes but surprising complexity. The addition of just a few Ag atoms per nanocrystal causes a large enhancement in the fluorescence, reaching efficiencies comparable to core-shell nanocrystals. While Ag was expected to be a substitutional acceptor, nonmonotonic trends in the fluorescence and Fermi level suggest that Ag changes from an interstitial (n-type) to a substitutional (p-type) impurity with increased doping.