The Effect of Cu and Ga Doped ZnIn2S4 under Visible Light on the High Generation of H2 Production
The Effect of Cu and Ga Doped ZnIn2S4 under Visible Light on the High Generation of H2 Production
复制标题
DOI：
10.3390/chemengineering3040079
复制
发表时间：
2019-09
期刊：
影响因子：
2.5
通讯作者：
Ikki Tateishi;M. Furukawa;H. Katsumata;S. Kaneco
中科院分区：
文献类型：
--
作者：
Ikki Tateishi;M. Furukawa;H. Katsumata;S. Kaneco
采用简单的一步溶剂热法制备了Cu+和Ga3+共掺杂ZnIn2S4光催化剂(Zn（1−2x)(CuGa)xIn2S4）。Zn(1−2x)(CuGa)xIn2S4在可见光（λ > 420 nm; 4500µW/cm2）照射下是H2析出的高效光催化剂。研究了Zn(1−2x)(CuGa)xIn2S4的（Cu和Ga）/Zn摩尔比对其晶体结构（六方结构）、形貌（微球状花）、光学性能（光捕获活性和电荷空穴分离能力）和光催化活性的影响。Zn0.84(CuGa)0.13In2S4的H2析出速率最高，为1650µmol·h−1·g−1，是未处理ZnIn2S4的3.3倍。随着Cu+和Ga3+掺杂量的增加，Zn(1−2x)(CuGa)xIn2S4的带隙能从2.67 eV降低到1.90 eV。
A Cu+ and Ga3+ co-doped ZnIn2S4 photocatalyst (Zn(1−2x)(CuGa)xIn2S4) with controlled band gap was prepared via a simple one-step solvothermal method. Zn(1−2x)(CuGa)xIn2S4 acted as an efficient photocatalyst for H2 evolution under visible light irradiation (λ > 420 nm; 4500 µW/cm2). The effects of the (Cu and Ga)/Zn molar ratios of Zn(1−2x)(CuGa)xIn2S4 on the crystal structure (hexagonal structure), morphology (microsphere-like flower), optical property (light harvesting activity and charge hole separation ability), and photocatalytic activity have been investigated in detail. The maximum H2 evolution rate (1650 µmol·h−1·g−1) was achieved over Zn0.84(CuGa)0.13In2S4, showing a 3.3 times higher rate than that of untreated ZnIn2S4. The bandgap energy of Zn(1−2x)(CuGa)xIn2S4 decreased from 2.67 to 1.90 eV as the amount of doping Cu+ and Ga3+ increased.