GaAs/AlAs tunnelling structure: Temperature dependence of ASPAT detectors
GaAs/AlAs tunnelling structure: Temperature dependence of ASPAT detectors
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GaAs/AlAs 隧道结构：ASPAT 探测器的温度依赖性
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
M. Kelly
中科院分区：
文献类型：
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作者：
M. Abdullah;Y. Wang;J. Sexton;M. Missous;M. Kelly
用固体源分子束外延（SSMBE）技术成功地生长了GaAs/AlAs非对称间隔层隧道二极管（ASPAT），它具有很薄的AlAs层（10 ML）。这些ASPAT二极管的电流-电压（IV）特性的测量两个不同的发射极的几何形状和在77至398 K的温度范围内。一个内部制造的肖特基势垒二极管（SBD）和ASPAT之间的温度依赖性进行了比较。ASPAT二极管的IV特性的模拟和测量数据之间实现了密切的协议。对于发射极尺寸为6×6 μm2的二极管，截止频率的计算值为200 GHz。
A GaAs/AlAs Asymmetric spacer layer Tunnel diode (ASPAT) with very thin (10ML) layer of AlAs have been successfully grown by solid source molecular beam epitaxy (SSMBE). The Current-voltage (IV) characteristics of these ASPAT diodes were measured for both different emitter geometries and over the temperature range of 77 to 398K. A comparison was made between an in-house fabricated Schottky barrier diode (SBD) and the ASPAT in term of temperature dependencies. A close agreement is achieved for the IV characteristics of the ASPAT diode between simulated and measured data. A calculated value of cut off frequency of 200GHz can be achieved for diodes with an emitter size of 6×6 μm2 used in this study.