Optically pumped room-temperature GaAs nanowire lasers
Optically pumped room-temperature GaAs nanowire lasers
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DOI：
10.1038/nphoton.2013.303
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发表时间：
2013-12-01
期刊：
影响因子：
35
通讯作者：
Jagadish, Chennupati
中科院分区：
文献类型：
--
作者：
Saxena, Dhruv;Mokkapati, Sudha;Jagadish, Chennupati
近红外激光器在光学数据通信、光谱学和医学诊断中具有重要意义。半导体纳米线为三维器件集成提供了减少器件占地面积的可能性，因此在光电器件的背景下得到了广泛的研究（1,2）。尽管可见和紫外纳米线激光器已经得到了广泛的应用（3-11），但由于材料质量问题和俄歇复合，室温红外纳米线激光器的进展受到限制（12,13）。（Al）GaAs是一种重要的红外激光器材料体系，广泛应用于传统激光器。砷化镓具有非常大的表面复合速度，这对于纳米线器件来说是一个严重的问题，因为它们的表面体积比很大（14,15）。本文通过合理设计法布里-珀罗腔、优化材料质量和最小化表面复合，展示了在核-壳-帽GaAs/AlGaAs/GaAs纳米线中的室温激光。我们的演示是将（Al） GaAs纳米线激光器整合到近红外波长纳米级光电器件设计中的重要一步。
Near-infrared lasers are important for optical data communication, spectroscopy and medical diagnosis. Semiconductor nanowires offer the possibility of reducing the footprint of devices for three-dimensional device integration and hence are being extensively studied in the context of optoelectronic devices(1,2). Although visible and ultraviolet nanowire lasers have been demonstrated widely(3-11), progress towards room-temperature infrared nanowire lasers has been limited because of material quality issues and Auger recombination(12,13). (Al)GaAs is an important material system for infrared lasers that is extensively used for conventional lasers. GaAs has a very large surface recombination velocity, which is a serious issue for nanowire devices because of their large surface-to-volume ratio(14,15). Here, we demonstrate room-temperature lasing in core-shell-cap GaAs/AlGaAs/GaAs nanowires by properly designing the Fabry-Perot cavity, optimizing the material quality and minimizing surface recombination. Our demonstration is a major step towards incorporating (Al) GaAs nanowire lasers into the design of nanoscale optoelectronic devices operating at near-infrared wavelengths.