Real-time observations of vacancy diffusion on Si(001)-(2 x 1) by scanning tunneling microscopy.
Real-time observations of vacancy diffusion on Si(001)-(2 x 1) by scanning tunneling microscopy.
复制标题
通过扫描隧道显微镜实时观察 Si(001)-(2 x 1) 上的空位扩散。
作者：
Kitamura;Lagally;Webb
使用扫描隧道显微镜实时研究了 Si(001)-(2×1) 上自然产生的空位的运动，使用了一种新颖的方法，其中重复的线扫描以时间与位置伪图像的形式显示。个别跳槽的空缺问题得到解决。空位扩散是沿着二聚体行的一维扩散。测量到单个二聚体空位扩散的活化能为 1.7±0.4 eV
The motion of naturally occurring vacancies on Si(001)-(2×1) has been investigated in real time with scanning tunneling microscopy, using a novel method in which repeated line scans are displayed in the form of a time-versus-position pseudoimage. Individual jumps of the vacancies are resolved. Vacancy diffusion is one dimensional along the dimer row. An activation energy of 1.7±0.4 eV has been measured for the diffusion of the single dimer vacancy