Nucleation and defect generation in lattice matched and mismatched heteroepitaxial layers in the GaAs/AlxGa1−xP/Si system
Nucleation and defect generation in lattice matched and mismatched heteroepitaxial layers in the GaAs/AlxGa1−xP/Si system
复制标题
GaAs/AlxGa1−xP/Si 系统中晶格匹配和失配异质外延层的成核和缺陷生成
DOI：
10.1063/1.345490
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发表时间：
1990
影响因子：
3.2
通讯作者：
M. Umeno
中科院分区：
文献类型：
--
作者：
T. George;E. Weber;S. Nozaki;A. Wu;N. Noto;M. Umeno
本文用透射电子显微镜研究了在700 ° C下用金属有机化学气相沉积法在Si衬底上生长AlxGa 1 −xP缓冲层的GaAs异质外延生长。这种GaAs/AlxGa 1 −xP/Si系统的独特之处在于，它允许人们分别研究晶格失配（GaAs/AlxGa 1 −xP）和极性/非极性（AlxGa 1 −xP/Si）效应对化合物半导体异质外延生长的影响。岛型成核被观察到两种效应独立作用，尽管由于极性/非极性效应（AlxGa 1 −xP/Si）的三维生长可以通过增加AlxGa 1 −xP层的Al含量（x>0.2）来抑制。GaAs的成核似乎被AlxGa 1-xP缓冲层的性质所改变，即，无论它们是岛的形式还是平面层的形式。单晶、3 μm厚的GaAs层可以在700 °C下直接在AlxGa 1 −xP缓冲层上生长，而无需采用两步技术。这一结果表明，纯晶格…
The heteroepitaxial growth of GaAs on Si substrates at 700 °C using AlxGa1−xP buffer layers grown at 900 °C by metalorganic chemical vapor deposition is studied using transmission electron microscopy. This GaAs/AlxGa1−xP/Si system is unique in that it allows one to study separately the influence of lattice‐mismatch (GaAs/AlxGa1−xP) and polar/nonpolar (AlxGa1−xP/Si) effects on the heteroepitaxial growth of compound semiconductors. Island‐type nucleation is observed for both effects acting independently, though three‐dimensional growth due to the polar/nonpolar effect (AlxGa1−xP/Si) can be suppressed by increasing the Al content (x>0.2) of the AlxGa1−xP layers. The nucleation of the GaAs appears to be modified by the nature of the AlxGa1−xP buffer layers, i.e., whether they are in the form of islands or planar layers. Single‐crystal, 3‐μm‐thick layers of GaAs can be grown directly at 700 °C on the AlxGa1−xP buffer layers without resorting to a two‐step technique. This result demonstrates that purely lattice...