Sintering behavior and electrical properties of the paraelectric/dielectric composite system BST/MBO
Sintering behavior and electrical properties of the paraelectric/dielectric composite system BST/MBO
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DOI：
10.1016/j.jeurceramsoc.2021.07.008
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发表时间：
2021-08-27
影响因子：
5.7
通讯作者：
Binder, J. R.
中科院分区：
文献类型：
--
作者：
Haeuser, K.;Azmi, R.;Binder, J. R.
研究了复合体系Ba0.6Sr0.4TiO3/Mg3B2O6 （BST/MBO）的烧结温度和成分对介电性能的影响。在高达1200摄氏度的温度下进行膨胀测量，在1050摄氏度下，所有MBO含量为22.0%或更高的复合材料的密度都超过了理论值的90%。在高达1200℃的温度下进行了原位XRD研究，从1120℃开始检测到Mg2TiO4的形成，这些数据集用于制作一组MBO含量为17.8- 79.7%的组合物。在1050℃时，通过EDX和ToF-SIMS研究了BST/MBO界面上的元素分布。观察到钛从BST向MBO迁移，迁移主要集中在界面区。通过扫描电镜和图像分析确定了不同组分的微观结构。即使在1050℃烧结的样品中也发现了第三相的痕迹。在13.56 MHz下测量了样品的介电性能，并与文献中的预期行为进行了比较。结果发现，与选择的模型相比，光谱中间的成分显示出更低的介电常数、损耗和可调性，从而导致材料质量因子的总体增加。这是由于BST在界面处钝化造成的。
The composite system Ba0.6Sr0.4TiO3/Mg3B2O6 (BST/MBO) was investigated in regard to the influence of sintering temperature and composition on the dielectric properties. Dilatometry measurements were carried out at up to 1200 degrees C. At 1050 degrees C, all composites with an MBO content of 22.0 vol% or more showed densities over 90 % of the theoretical value. An in-situ XRD study was conducted at up to 1200 degrees C. The formation of Mg2TiO4 was detected starting at 1120 degrees C. These data sets were used to make a set of compositions ranging from 17.8-79.7 vol % MBO. At 1050 degrees C, the element distribution at the BST/MBO interfaces was investigated via EDX and ToF-SIMS. It was observed that titanium migrates from the BST into the MBO, mostly in the interface region. The microstructure of the different compositions was determined via SEM and image analysis. Traces of a third phase were found even for samples sintered at 1050 degrees C. The dielectric properties of the samples were measured at 13.56 MHz and compared to the expected behavior from the literature. It was found that compositions in the middle of the spectrum showed reduced permittivity, loss, and tunability, resulting in an overall increase in the material quality factor when compared to the chosen model. This was attributed to the passivation of the BST at the interfaces.