Ultralow reflectivity surfaces by formation of nanocrystalline Si layer for crystalline Si solar cells
Ultralow reflectivity surfaces by formation of nanocrystalline Si layer for crystalline Si solar cells
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DOI：
10.1016/j.solmat.2015.05.006
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发表时间：
2015-10
影响因子：
6.9
通讯作者：
Daichi Irishika;K. Imamura;H. Kobayashi
中科院分区：
文献类型：
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作者：
Daichi Irishika;K. Imamura;H. Kobayashi
我们已经开发出一种简单的方法来形成纳米晶硅层，它只涉及接触的Pt催化剂与硅晶片浸泡在H2 O2加HF溶液。在形成约150 nm厚度的纳米晶Si层后，反射率变得小于3%。在纳米晶Si/晶体Si结构上可以产生高质量的pn结。采用沉积法进行表面钝化后，在标准测试条件下，即使没有减反射膜，具有纳米晶Si层的p型单晶硅基太阳能电池也能产生39.2 mA/cm 2的高光电流密度，转换效率达到18.2%。使用磷硅酸盐玻璃在纳米晶Si层上的沉积，随后在合成气体中退火的钝化方法提高了在300和600 nm之间的短波长区域中的量子效率。
We have developed a simple method to form a nanocrystalline Si layer, which simply involves contact of Pt catalysts with Si wafers immersed in an H2O2plus HF solution. The reflectivity becomes less than 3% after the formation of the nanocrystalline Si layer of ~150 nm thickness. High quality pn-junction can be produced on the nanocrystalline Si/crystalline Si structure. With surface passivation using the deposition method, p-type single crystalline Si-based solar cells with the nanocrystalline Si layer generate a high photocurrent density of 39.2 mA/cm2under the standard test condition (STD) even without anti-reflection coating and the conversion efficiency of 18.2% is achieved. The passivation method using deposition of phosphosilicate glass on the nanocrystalline Si layer followed by annealing in forming gas improves the quantum efficiency in the short-wavelength region ranging between 300 and 600 nm.