Mechanism of surface leakage of nanoscale Schottky contacts between ErSi2 nanoislands and Si(001)
Mechanism of surface leakage of nanoscale Schottky contacts between ErSi2 nanoislands and Si(001)
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DOI：
10.1063/1.3435471
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发表时间：
2010-05
影响因子：
4
通讯作者：
Junqiang Song;T. Ding;Q. Cai
中科院分区：
文献类型：
--
作者：
Junqiang Song;T. Ding;Q. Cai
利用O2和NH3的受控表面吸附研究了外延生长的ErSi 2纳米岛与p-Si（100）之间的纳米肖特基接触的表面泄漏机制。发现表面漏导电在纳米接触的电输运中起主导作用。有趣的是，表面漏电流随反向偏压线性增加，但随正向偏压呈指数增加。这种行为可以用反向偏压下的表面态导电和正向偏压下的低表面势垒区来解释。
The surface leakage mechanism of nanoscale Schottky contacts between epitaxially grown ErSi2 nanoislands and p-Si(100) is investigated by using controlled surface adsorption of O2 and NH3. The surface leakage conduction is found to play a dominant role in the electrical transport of the nanocontacts. Interestingly, the surface leakage current increases linearly with reverse bias but it increases exponentially with forward bias. This behavior can be explained using surface-state conduction with reverse bias and low surface barrier region with forward bias.