Continuous Mott transition in semiconductor moire superlattices
Continuous Mott transition in semiconductor moire superlattices
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DOI:
10.1038/s41586-021-03853-0
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发表时间:
2021-09-16
期刊:
影响因子:
64.8
通讯作者:
Mak, Kin Fai
中科院分区:
文献类型:
--
作者:
Li, Tingxin;Jiang, Shengwei;Mak, Kin Fai
The evolution of a Landau Fermi liquid into a non-magnetic Mott insulator with increasing electronic interactions is one of the most puzzling quantum phase transitions in physics(1-6). The vicinity of the transition is believed to host exotic states of matter such as quantum spin liquids(4-7), exciton condensates(8) and unconventional superconductivity(1). Semiconductor moire materials realize a highly controllable Hubbard model simulator on a triangular lattice(9-22), providing a unique opportunity to drive a metal-insulator transition (MIT) via continuous tuning of the electronic interactions. Here, by electrically tuning the effective interaction strength in MoTe2/WSe2 moire superlattices, we observe a continuous MIT at a fixed filling of one electron per unit cell. The existence of quantum criticality is supported by the scaling collapse of the resistance, a continuously vanishing charge gap as the critical point is approached from the insulating side, and a diverging quasiparticle effective mass from the metallic side. We also observe a smooth evolution of the magnetic susceptibility across the MIT and no evidence of long-range magnetic order down to similar to 5% of the Curie-Weiss temperature. This signals an abundance of low-energy spinful excitations on the insulating side that is further corroborated by the Pomeranchuk effect observed on the metallic side. Our results are consistent with the universal critical theory of a continuous Mott transition in two dimensions(4,23).The interaction strength in moire superlattices is tuned to drive a continuous metal-to-insulator transition at a fixed electron density.