Nanoscopic mechanism of impurity segregation at grain boundaries in silicon

Nanoscopic mechanism of impurity segregation at grain boundaries in silicon
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硅晶界杂质偏析的纳米机制

DOI:
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发表时间:
2016
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通讯作者:
M. Kohyama
M. Kohyama
中科院分区:
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作者:
Y. Ohno;K. Inoue;S. Ninomiya;K. Kutsukake;K. Fujiwara;M. Deura;I. Yonenaga;N. Ebisawa;Y. Shimizu;K. Inoue;Y. Nagai;H. Yoshida;S. Takeda;S. Tanaka;M. Kohyama

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