A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band
A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band
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DOI：
10.1109/rfic.2009.5135546
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发表时间：
2009-06
期刊：
影响因子：
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通讯作者：
T. Masuda;N. Shiramizu;Takahiro Nakamura;K. Washio
中科院分区：
文献类型：
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作者：
T. Masuda;N. Shiramizu;Takahiro Nakamura;K. Washio
为了实现24μ频段射频接收前端，设计了一种基于0.18 GHz m SiGe BiCMOS工艺的镜像抑制低噪声放大器。它在准毫米波频段的高镜像抑制比(IRR)是由于采用了陷波反馈电路。该低噪声放大器在27.2 GHz的工作频率下有14db的增益，在21.6 GHz的镜像频率下的IRR大于50dBIRR。虽然它的IIP3是−14dBm，但1.2V电源的功耗也很低，为7.9mW。
An image-rejection low-noise amplifier (LNA) based on 0.18-μm SiGe BiCMOS technology was developed in order to create a 24GHz-band RF receiver front-end. Its high image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region is due to the use of a notch feedback circuit. The LNA has a 14-dB gain at an operating frequency of 27.2 GHz and an IRR greater than 50 dB IRR at an image frequency of 21.6 GHz. While its IIP3 is −14 dBm, its power consumption with a 1.2-V power supply is also low, 7.9 mW.