Toward on-chip X-ray analysis
Toward on-chip X-ray analysis
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DOI：
10.1039/b415836a
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发表时间：
2005-01-01
期刊：
影响因子：
6.1
通讯作者：
Manz, A
中科院分区：
文献类型：
--
作者：
Greaves, ED;Manz, A
探索了在微流控芯片环境中使用X射线进行化学分析和结构测定的可能性。外部产生的辐射，放射性同位素辐射和芯片上产生的X射线被认为是激发手段的性能与X射线荧光和衍射技术的样品分析。通过不同的辐射源的芯片建筑材料的吸收性能进行审查和计算的吸收系数的数据，在此基础上，建议优化使用各种X射线源可以作出。通过衍射、荧光和片上X射线产生实验的初步实验结果，透视了片上X射线分析的能力和局限性。
The possibility of performing chemical analysis and structure determinations with the use of X-rays in a microfluidic chip environment is explored. Externally generated radiation, radioisotope irradiation and on-chip generated X-rays were considered as excitation means for the performance of sample analysis with the techniques of X-ray fluorescence and diffraction. The absorption properties of chip-building materials by different radiation sources are reviewed and data on absorption coefficients calculated, upon which recommendations for optimisations with the use of various X-ray sources may be made. The capabilities and limitations of on-chip X-ray analysis are placed in perspective by preliminary experimental results of diffraction, fluorescence and on-chip X-ray generation experiments.