Enhanced ferroelectric properties of Pb(Zr,Ti)O3 films by inducing permanent compressive stress
Enhanced ferroelectric properties of Pb(Zr,Ti)O3 films by inducing permanent compressive stress
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DOI：
10.1063/1.2174094
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发表时间：
2006-02
影响因子：
4
通讯作者：
Jae-Wung Lee;Gun-Tae Park;Chee-Sung Park;Hyoun‐Ee Kim
中科院分区：
文献类型：
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作者：
Jae-Wung Lee;Gun-Tae Park;Chee-Sung Park;Hyoun‐Ee Kim
本研究研究了退火后冷却过程中产生的永久残余压应力对 PbZrxTi1−xO3 (PZT) 薄膜铁电性能的影响。使用单一氧化物靶材通过射频磁控管溅射将 PZT 薄膜沉积在弹性弯曲硅基板的拉伸侧。退火后立即将基板从支架上取出，从而在薄膜上产生压应力。压缩应力有效地补偿了冷却过程中产生的固有拉伸应力。诱导应力显着增强了铁电性能；剩余极化和饱和极化分别增加了35%和24%，而矫顽场变化不大。与铁电特性相反，介电特性因应力而略有下降。
This study examined the effects of permanent residual compressive stress on the ferroelectric properties of PbZrxTi1−xO3 (PZT) films that was induced during cooling after annealing. PZT films were deposited on the tensile side of elastically bent silicon substrates by rf magnetron sputtering using a single oxide target. Compressive stress was induced on the film by removing the substrate from the holder immediately after annealing. The compressive stress effectively compensated for the inherent tensile stress that had developed during cooling. The ferroelectric properties were enhanced markedly by the induced stress; the remnant polarization and the saturation polarization increased by 35% and 24%, respectively, while the coercive field did not change much. Contrary to the ferroelectric properties, the dielectric properties decreased slightly by the stress.